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DMP3085LSD

Dual P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation 30V P channel enhancement mode MOSFET has been designed to minimise R_DS(ON) and yet maintain superior switching performance. This device is ideally suited to battery load switching.

Application(s)

Backlighting
Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	P+P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	3.9 A
P_D @T_A = +25°C (W)	1.7 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	70 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	95 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	5.2 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	11 nC
C_ISS Typ (pF)	563 pF

Technical Documents

SPICE Model

DMP3085LSD .spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2425	2019-10-04	2020-01-04	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products.
PCN-2403	2019-03-25	2019-06-19	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products.