Dual P-Channel Enhancement Mode MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation 30V P channel enhancement mode MOSFET has been designed to minimise RDS(ON) and yet maintain superior switching performance. This device is ideally suited to battery load switching.
Compliance (Only Automotive Supports PPAP) | Standard |
---|---|
AEC Qualified | Yes |
Polarity | P+P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 30 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 3.9 A |
PD @TA = +25°C (W) | 1.7 W |
RDS(ON)Max@ VGS(10V) (mΩ) | 70 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) | 95 mΩ |
|VGS(TH)| Max (V) | 3 V |
QG Typ @ |VGS| = 4.5V (nC) | 5.2 nC |
QG Typ @ |VGS| = 10V (nC) | 11 nC |
CISS Typ (pF) | 563 pF |