Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8
Dual P-Channel Enhancement Mode MOSFET
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This new generation 30V P channel enhancement mode MOSFET has been designed to minimise RDS(ON) and yet maintain superior switching performance. This device is ideally suited to battery load switching.
| Compliance (Only Automotive Supports PPAP) | Standard |
|---|---|
| AEC Qualified | Yes |
| Polarity | P+P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 3.9 A |
| PD @TA = +25°C (W) | 1.7 W |
| RDS(ON)Max@ VGS(10V) (mΩ) | 70 mΩ |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 95 mΩ |
| |VGS(TH)| Max (V) | 3 V |
| QG Typ @ |VGS| = 4.5V (nC) | 5.2 nC |
| QG Typ @ |VGS| = 10V (nC) | 11 nC |
| CISS Typ (pF) | 563 pF |
