Diodes Incorporated
SO 8

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This new generation 30V P-Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to battery load switching.


  • Backlighting
  • Power Management Functions
  • DC-DC Converters
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity P
    ESD Diodes (Y|N) No
    |VDS| (V) 30 V
    |VGS| (±V) 25 ±V
    |IDS| @TA = +25°C (A) 4.8 A
    PD @TA = +25°C (W) 1.7 W
    RDS(ON)Max@ VGS(10V)(mΩ) 45 mΩ
    RDS(ON)Max@ VGS(4.5V)(mΩ) 80 mΩ
    |VGS(TH)| Max (V) 2 V
    QG Typ @ |VGS| = 4.5V (nC) 5.1 nC
    QG Typ @ |VGS| = 10V (nC) 10.5 nC
    CISS Typ (pF) 620 pF

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    Technical Documents

    Recommended Soldering Techniques


    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
    Source for Select Discrete Products