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SO 8

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DMP3050LSS

P-Channel Enhancement Mode MOSFET

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Description

This new generation 30V P-Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to battery load switching.

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters
  • Specifications & Technical Documents

    Product Parameters

    Compliance (Only Automotive Supports PPAP)

    Standard

    AEC Qualified

    Yes

    Polarity

    P

    ESD Diodes (Y|N)

    No

    |VDS| (V)

    30 V

    |VGS| (±V)

    25 ±V

    |IDS| @TA = +25°C (A)

    4.8 A

    PD @TA = +25°C (W)

    1.7 W

    RDS(ON)Max@ VGS(10V)  (mΩ)

    45 mΩ

    RDS(ON)Max@ VGS(4.5V)  (mΩ)

    80 mΩ

    |VGS(TH)| Max (V)

    2 V

    QG Typ @ |VGS| = 4.5V (nC)

    5.1 nC

    QG Typ @ |VGS| = 10V (nC)

    10.5 nC

    CISS Typ (pF)

    620 pF

    Related Content

    Packages

    Technical Documents

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Purchase & Availability

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    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
    Source for Select Discrete Products