P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TC = +25°C (A) | 21 A |
| PD @TA = +25°C (W) | 1.28 W |
| PD @TC = +25°C (W) | 2.1 W |
| RDS(ON)Max@ VGS(10V)(mΩ) | 28 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 38 mΩ |
| |VGS(TH)| Max (V) | 2.4 V |
| QG Typ @ |VGS| = 4.5V (nC) | 11 nC |
| QG Typ @ |VGS| = 10V (nC) | 22 nC |
| CISS Typ (pF) | 1421 pF |
| CISS Condition @|VDS| (V) | 15 V |
