Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
U-DFN2020-6-Type-F.pngP-CHANNEL ENHANCEMENT MODE MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation 30V P Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 6.8 A |
| PD @TA = +25°C (W) | 2.03 W |
| RDS(ON)Max@ VGS(10V)(mΩ) | 25 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 38 mΩ |
| |VGS(TH)| Max (V) | 2.4 V |
| QG Typ @ |VGS| = 4.5V (nC) | 10.9 nC |
| QG Typ @ |VGS| = 10V (nC) | 22 nC |
| CISS Typ (pF) | 1241 pF |
| CISS Condition @|VDS| (V) | 15 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
