Diodes Incorporated
SO 8

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SO-8.png
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DMP3021SSS

30V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low RDS(ON) – Ensures On-State Losses Are Minimized
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products
  • Occupies just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen- and Antimony-Free. “Green” Device
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 30 V
|VGS| (±V) 25 ±V
|IDS| @TA = +25°C (A) 10.4 A
|IDS| @TC = +25°C (A) 39 A
PD @TA = +25°C (W) 1 W
PD @TC = +25°C (W) 2.5 W
RDS(ON)Max@ VGS(10V)(mΩ) 15 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 25 (@5V) mΩ
|VGS(TH)| Min (V) 1 V
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 17.4 nC
QG Typ @ |VGS| = 10V (nC) 34 nC
CISS Typ (pF) 1799 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC