Diodes Incorporated
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DMP3018SFVQ (Not Recommended for new design)

NRND = Not Recommended for New Design

30V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • 100% Unclamped Inductive Switching (Test in Production) – Ensures More Reliable and Robust End Application
  • Low RDS(ON) – ensures on-state losses are minimized
  • Small form factor thermally efficient package enables higher density end products
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Automotive
CISS Condition @|VDS| (V) 15
CISS Typ (pF) 2147
Compliance (Only Automotive(Q) supports PPAP) Automotive
Configuration Single
ESD Diodes (Y|N) Yes
|IDS| @TA = +25°C (A) 11
PD @TA = +25°C (W) 1.9
Polarity P
Compliance (Only Automotive supports PPAP) Automotive (Q)
QG Typ @ |VGS| = 10V (nC) 51
QG Typ @ |VGS| = 4.5V (nC) 28 (@5V)
AEC Qualified Yes
RDS(ON)Max@ VGS(10V)(mΩ) 12
RDS(ON)Max@ VGS(4.5V)(mΩ) 21
|VDS| (V) 30
|VGS| (±V) 25
|VGS(TH)| Max (V) 3

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2533 2021-09-02 2022-03-02 Device End of Life (EOL)