DMP3018SFVQ (NRND)

NRND = Not Recommended for New Design

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switching (Test in Production) – Ensures More Reliable and Robust End Application
Low RDS(ON) – ensures on-state losses are minimized
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable

Application(s)

Backlighting
Power Management Functions
DC-DC Converters

Specifications & Technical Documents

Product Parameters

C_ISS Condition @\|V_DS\| (V)	15
C_ISS Typ (pF)	2147
Configuration	Single
ESD Diodes (Y\|N)	Yes
Polarity	P
Q_G Typ @ \|V_GS\| = 10V (nC)	51
Q_G Typ @ \|V_GS\| = 4.5V (nC)	28 (@5V)
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(10V) (mΩ)	12
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	21
\|V_DS\| (V)	30
\|V_GS\| (±V)	25
\|V_GS(TH)\| Max (V)	3

Technical Documents

SPICE Model

DMP3018SFVQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2533	2021-09-02	2022-03-02	Device End of Life (EOL)