Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI3333-8
NRND = Not Recommended for New Design
30V P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
CISS Condition @|VDS| (V) |
15 |
|---|---|
CISS Typ (pF) |
2246 |
Configuration |
Single |
ESD Diodes (Y|N) |
Yes |
Polarity |
P |
QG Typ @ |VGS| = 10V (nC) |
41 |
QG Typ @ |VGS| = 4.5V (nC) |
20.5 (@5V) |
AEC Qualified |
Yes |
RDS(ON)Max@ VGS(10V) (mΩ) |
10 |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
18 |
|VDS| (V) |
30 |
|VGS| (±V) |
25 |
|VGS(TH)| Max (V) |
3 |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2533 | 2021-09-02 | 2022-03-02 | Device End of Life (EOL) |
| PCN-2522 | 2021-08-24 | 2021-11-24 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly/Test Site Using PdCu or Cu Bond Wire with Standardization of Assembly Bill of Materials for Select Automotive Products |
