Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI3333-8

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DMP3017SFGQ (NRND)

NRND = Not Recommended for New Design

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
ESD Protected Gate

Application(s)

Backlighting
Power Management Functions
DC-DC Converters
Automotive
Communications

Specifications & Technical Documents

Product Parameters

C_ISS Condition @\|V_DS\| (V)	15
C_ISS Typ (pF)	2246
Configuration	Single
ESD Diodes (Y\|N)	Yes
Polarity	P
Q_G Typ @ \|V_GS\| = 10V (nC)	41
Q_G Typ @ \|V_GS\| = 4.5V (nC)	20.5 (@5V)
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(10V) (mΩ)	10
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	18
\|V_DS\| (V)	30
\|V_GS\| (±V)	25
\|V_GS(TH)\| Max (V)	3

Technical Documents

SPICE Model

DMP3017SFGQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2533	2021-09-02	2022-03-02	Device End of Life (EOL)
PCN-2522	2021-08-24	2021-11-24	Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly/Test Site Using PdCu or Cu Bond Wire with Standardization of Assembly Bill of Materials for Select Automotive Products