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PowerDI3333-8.pngNRND = Not Recommended for New Design
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This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| Compliance (Only Automotive supports PPAP) | DMP3017SFGQ |
|---|---|
| CISS Condition @|VDS| (V) | N/A |
| CISS Typ (pF) | N/A |
| ESD Diodes (Y|N) | Yes |
| |IDS| @TA = +25°C (A) | N/A |
| PD @TA = +25°C (W) | 0.94 |
| Polarity | P |
| QG Typ @ |VGS| = 10V (nC) | 41 |
| QG Typ @ |VGS| = 4.5V (nC) | 20.5 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(10V)(mΩ) | 10 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 18 |
| |VDS| (V) | 30 |
| |VGS| (±V) | 25 |
| |VGS(TH)| Max (V) | 3 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2456 | 2020-05-29 | 2020-08-29 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site Using Copper or Palladium Coated Copper Bond Wire with Standardization of Assembly Bill of Materials, Or as an Additional Wafer Plating, Back Grinding and Back Metal Process Source, and Qualification of Additional Wafer Source for Select Discrete Products. |
| PCN-2318 | 2018-01-22 | 2018-01-22 | Device End of Life (EOL) |
