Diodes Incorporated — Analog and discrete power solutions
SO 8

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DMP3015LSSQ (NRND)

NRND = Not Recommended for New Design

30V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters
  • Automotive

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Automotive
CISS Condition @|VDS| (V) 20
CISS Typ (pF) 2748
Compliance (Only Automotive(Q) supports PPAP) Automotive
Configuration Single
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 13
PD @TA = +25°C (W) 2.5
Polarity P
Compliance (Only Automotive supports PPAP) Automotive (Q)
QG Typ @ |VGS| = 10V (nC) 60.4
QG Typ @ |VGS| = 4.5V (nC) 30
AEC Qualified Yes
RDS(ON)Max@ VGS(10V)(mΩ) 11
RDS(ON)Max@ VGS(4.5V)(mΩ) 17
|VDS| (V) 30
|VGS| (±V) 20
|VGS(TH)| Max (V) 2

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf