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DMP3011SSS

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low RDS(ON) – Ensures On-State Losses Are Minimized
Small Form Factor Thermally Efficient Package Enables Higher Density End Products
Occupies just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product
ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotive-products/.
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

Backlighting
Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	P
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	25 ±V
\|I_DS\| @T_A = +25°C (A)	11 A
\|I_DS\| @T_C = +25°C (A)	32 A
P_D @T_A = +25°C (W)	1.8 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	10 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	18 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	25 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	46 nC
C_ISS Typ (pF)	2380 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMP3011SSS.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile