DMP3011SPDW

Dual P-Channel Enhancement Mode MOSFET PowerDI5060-8

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low R_DS(ON) – Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Wettable Flank for Improved Optical Inspection
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Wireless charging
DC-DC converters
Power managements

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	P+P
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	25 ±V
\|I_DS\| @T_A = +25°C (A)	12.1 A
\|I_DS\| @T_C = +25°C (A)	38.2 A
P_D @T_A = +25°C (W)	2.9 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	13 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	20 mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	25(@5v) nC
Q_G Typ @ \|V_GS\| = 10V (nC)	46 nC
C_ISS Typ (pF)	2380 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

SPICE Model

DMP3011SPDW.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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