P-Channel Enhancement Mode MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Compliance (Only Automotive Supports PPAP) | Automotive |
---|---|
AEC Qualified | Yes |
Polarity | P |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 20 V |
|VGS| (±V) | 6 ±V |
|IDS| @TA = +25°C (A) | 0.6 A |
PD @TA = +25°C (W) | 0.5 W |
RDS(ON)Max@ VGS(4.5V) (mΩ) | 750 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) | 1050 mΩ |
RDS(ON)Max@ VGS(1.8V) (mΩ) | 1500 mΩ |
|VGS(TH)| Min (V) | 0.5 V |
|VGS(TH)| Max (V) | 1 V |
QG Typ @ |VGS| = 4.5V (nC) | 0.7 nC |
CISS Typ (pF) | 49 pF |
CISS Condition @|VDS| (V) | 16 V |