20V P-Channel Enhancement Mode MOSFET PowerDI5060-8
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in power management and load switch.
Compliance (Only Automotive Supports PPAP) | Standard |
---|---|
AEC Qualified | No |
Polarity | P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 20 V |
|VGS| (±V) | 12 ±V |
|IDS| @TC = +25°C (A) | 84 A |
PD @TA = +25°C (W) | 1.95 W |
PD @TC = +25°C (W) | 3.57 W |
RDS(ON)Max@ VGS(10V) (mΩ) | 5.5 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) | 7 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) | 9 mΩ |
|VGS(TH)| Min (V) | 0.4 V |
|VGS(TH)| Max (V) | 1.3 V |
QG Typ @ |VGS| = 4.5V (nC) | 55 nC |
QG Typ @ |VGS| = 10V (nC) | 123 nC |
CISS Typ (pF) | 4777 pF |
CISS Condition @|VDS| (V) | 10 V |
Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.