Diodes Incorporated
PowerDI3333 8

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DMP26M1UFG

20V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

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Description

This MOSFET is designed to minimize on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low RDS(on) – ensures on state losses are minimized
  • Small form factor, thermally efficient package enables higher
    density end products
  • Occupies just 33% of the board area occupied by SO-8 enabling
    smaller end product
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change control
    (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please
    contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) No
|VDS| (V) 20 V
|VGS| (±V) 10 ±V
|IDS| @TC = +25°C (A) 71 A
PD @TA = +25°C (W) 3 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 5.5 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 7.5 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 12 mΩ
|VGS(TH)| Min (V) 0.4 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 75 nC
QG Typ @ |VGS| = 10V (nC) 164 nC
CISS Typ (pF) 5392 pF
CISS Condition @|VDS| (V) 10 V

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Technical Documents

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TN1.pdf

RoHS CofC