Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-WLB1515-9
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-WLB1515-9
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-WLB1515-9
NRND = Not Recommended for New Design
P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation 25V P-Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.
CISS Condition @|VDS| (V) |
N/A |
|---|---|
CISS Typ (pF) |
342 |
ESD Diodes (Y|N) |
Yes |
Polarity |
P |
QG Typ @ |VGS| = 10V (nC) |
N/A |
QG Typ @ |VGS| = 4.5V (nC) |
4.8 |
AEC Qualified |
Yes |
RDS(ON)Max@ VGS(1.8V) (mΩ) |
60 |
RDS(ON)Max@ VGS(10V) (mΩ) |
N/A |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
50 |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
40 |
|VDS| (V) |
25 |
|VGS| (±V) |
6 |
|VGS(TH)| Max (V) |
1.1 |
|VGS(TH)| Min (V) |
0.4 |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2556 | 2021-11-22 | 2022-05-22 | Device End of Life (EOL) |
| PCN-2507 | 2021-02-03 | 2021-05-03 | Qualification of Additional Wafer Backside Material Supplier |
