Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-WLB1515-9
NRND = Not Recommended for New Design
P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation 25V P-Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.
| CISS Condition @|VDS| (V) | N/A |
|---|---|
| CISS Typ (pF) | 342 |
| ESD Diodes (Y|N) | Yes |
| Polarity | P |
| QG Typ @ |VGS| = 10V (nC) | N/A |
| QG Typ @ |VGS| = 4.5V (nC) | 4.8 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V) (mΩ) | 60 |
| RDS(ON)Max@ VGS(10V) (mΩ) | N/A |
| RDS(ON)Max@ VGS(2.5V) (mΩ) | 50 |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 40 |
| |VDS| (V) | 25 |
| |VGS| (±V) | 6 |
| |VGS(TH)| Max (V) | 1.1 |
| |VGS(TH)| Min (V) | 0.4 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2556 | 2021-11-22 | 2022-05-22 | Device End of Life (EOL) |
| PCN-2507 | 2021-02-03 | 2021-05-03 | Qualification of Additional Wafer Backside Material Supplier |
