Diodes Incorporated
PowerDI5060 8

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DMP22M2UPS

20V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage

Application(s)

  • Backlighting
  • DC-DC Converters
  • Power management functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) No
|VDS| (V) 20 V
|VGS| (±V) 12 ±V
|IDS| @TC = +25°C (A) 42 A
PD @TA = +25°C (W) 2.3 W
RDS(ON)Max@ VGS(10V)(mΩ) 2.5 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 3.5 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 5 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1.4 V
QG Typ @ |VGS| = 4.5V (nC) 228 nC
QG Typ @ |VGS| = 10V (nC) 476 nC
CISS Typ (pF) 12826 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf