Diodes Incorporated
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DMP22M1UPSW

20V P-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power-management applications.

Feature(s)

  • Thermally Efficient Package-Cooler Running Applications
  • < 1.1mm Package Profile – Ideal for Thin Applications
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • DC-DC converters
  • Load switches

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) No
|VDS| (V) 20 V
|VGS| (±V) 12 ±V
|IDS| @TC = +25°C (A) 60 A
PD @TA = +25°C (W) 3.2 W
RDS(ON)Max@ VGS(10V)(mΩ) 1.9 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 2.4 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 4 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1.4 V
QG Typ @ |VGS| = 4.5V (nC) 196 nC
QG Typ @ |VGS| = 10V (nC) 425 nC
CISS Typ (pF) 15853 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf