Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23
NRND = Not Recommended for New Design
P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
CISS Condition @|VDS| (V) |
10 |
|---|---|
CISS Typ (pF) |
250 |
ESD Diodes (Y|N) |
No |
Polarity |
P |
QG Typ @ |VGS| = 4.5V (nC) |
4.3 |
AEC Qualified |
Yes |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
225 |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
110 |
|VDS| (V) |
20 |
|VGS| (±V) |
12 |
|VGS(TH)| Max (V) |
1.25 |
|VGS(TH)| Min (V) |
0.45 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2722 | 2025-02-11 | 2025-05-12 | Change Lead Frame Type from SOT-23R to SOT-23T and Qualify Additional Diodes Internal Assembly and Test Site (CAT) for Select Automotive Products |
| PCN-2457 | 2020-05-27 | 2020-08-27 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, and Change to Palladium Coated Copper Bond Wire, and New Mold Compound on Select Automotive Products |
