Diodes Incorporated
SOT23

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SOT23.png
Back to Inactve Datasheet Archive

DMP2225LQ (Not Recommended for new design)

NRND = Not Recommended for New Design

P-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Automotive (Q)
CISS Condition @|VDS| (V) 10
CISS Typ (pF) 250
Compliance (Only Automotive(Q) supports PPAP) Automotive
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 2.6
PD @TA = +25°C (W) 1.08
Polarity P
Compliance (Only Automotive supports PPAP) Automotive (Q)
QG Typ @ |VGS| = 4.5V (nC) 4.3
AEC Qualified Yes
RDS(ON)Max@ VGS(2.5V)(mΩ) 225
RDS(ON)Max@ VGS(4.5V)(mΩ) 110
|VDS| (V) 20
|VGS| (±V) 12
|VGS(TH)| Max (V) 1.25
|VGS(TH)| Min (V) 0.45

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2457 2020-05-27 2020-08-27 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, and Change to Palladium Coated Copper Bond Wire, and New Mold Compound on Select Automotive Products