NRND = Not Recommended for New Design
P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| CISS Condition @|VDS| (V) | 16 |
|---|---|
| CISS Typ (pF) | 95 |
| Compliance (Only Automotive Supports PPAP) | On Request |
| ESD Diodes (Y|N) | Yes |
| |IDS| @TA = +25°C (A) | 0.43 |
| PD @TA = +25°C (W) | 0.15 |
| Polarity | P |
| QG Typ @ |VGS| = 10V (nC) | N/A |
| QG Typ @ |VGS| = 4.5V (nC) | N/A |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 2600 |
| RDS(ON)Max@ VGS(10V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 1600 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 1100 |
| |VDS| (V) | 20 |
| |VGS| (±V) | 8 |
| |VGS(TH)| Max (V) | 1 |
| |VGS(TH)| Min (V) | 0.5 |
