Diodes Incorporated
X2 DFN1006 3

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DMP21D5UFB4

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • DC-DC Converters
  • Power management functions
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity P
    ESD Diodes (Y|N) Yes
    |VDS| (V) 20 V
    |VGS| (±V) 8 ±V
    |IDS| @TA = +25°C (A) 0.7 A
    PD @TA = +25°C (W) 0.95 W
    RDS(ON)Max@ VGS(4.5V)(mΩ) 1000 mΩ
    RDS(ON)Max@ VGS(2.5V)(mΩ) 1500 mΩ
    RDS(ON)Max@ VGS(1.8V)(mΩ) 2000 mΩ
    |VGS(TH)| Min (V) 0.5 V
    |VGS(TH)| Max (V) 1 V
    QG Typ @ |VGS| = 4.5V (nC) 0.5 nC
    CISS Typ (pF) 46.1 pF
    CISS Condition @|VDS| (V) 10 V

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2299 2018-03-01 2018-06-01 Additional Qualified (A/T) Assembly Test Site