Diodes Incorporated — Analog and discrete power solutions
X2 DFN0806 3

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X2-DFN0806-3

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DMP21D2UFA

P-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Analog Switch

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

No

Polarity

P

ESD Diodes (Y|N)

Yes

|VDS| (V)

20 V

|VGS| (±V)

8 ±V

|IDS| @TA = +25°C (A)

0.33 A

PD @TA = +25°C (W)

0.36 W

RDS(ON)Max@ VGS(4.5V)  (mΩ)

1000 mΩ

RDS(ON)Max@ VGS(2.5V)  (mΩ)

1200 mΩ

RDS(ON)Max@ VGS(1.8V)  (mΩ)

1600 mΩ

|VGS(TH)| Min (V)

0.3 V

|VGS(TH)| Max (V)

1 V

QG Typ @ |VGS| = 4.5V (nC)

0.8 nC

CISS Typ (pF)

49 pF

CISS Condition @|VDS| (V)

15 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products