Diodes Incorporated
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This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.


  • Portable electronics
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity P
    ESD Diodes (Y|N) Yes
    |VDS| (V) 20 V
    |VGS| (±V) 8 ±V
    |IDS| @TA = +25°C (A) 1.14 A
    PD @TA = +25°C (W) 0.93 W
    RDS(ON)Max@ VGS(4.5V)(mΩ) 495 mΩ
    RDS(ON)Max@ VGS(2.5V)(mΩ) 730 mΩ
    RDS(ON)Max@ VGS(1.8V)(mΩ) 960 mΩ
    |VGS(TH)| Min (V) 0.45 V
    |VGS(TH)| Max (V) 1.2 V
    QG Typ @ |VGS| = 4.5V (nC) 1 nC
    CISS Typ (pF) 76.5 pF
    CISS Condition @|VDS| (V) 10 V

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    Technical Documents

    SPICE Model

    Recommended Soldering Techniques


    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2498 2021-04-07 2021-04-07 Qualification of Additional Wafer Source, and Additional Assembly and Test (A/T) Site for Select Discrete Products