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TSOT26

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TSOT26

TSOT26

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TSOT26

TSOT26

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TSOT26

Back to DMP2110UVTQ

DMP2110UVTQ

Dual P-Channel Enhancement Mode MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMP2110UVTQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF 16949 certified facilities
  • https://www.diodes.com/quality/product-definitions/

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Automotive

AEC Qualified

Yes

Polarity

P+P

ESD Diodes (Y|N)

No

|VDS| (V)

20 V

|VGS| (±V)

10 ±V

|IDS| @TA = +25°C (A)

1.8 A

PD @TA = +25°C (W)

1.1 W

RDS(ON)Max@ VGS(4.5V)  (mΩ)

150 mΩ

RDS(ON)Max@ VGS(2.5V)  (mΩ)

200 mΩ

RDS(ON)Max@ VGS(1.8V)  (mΩ)

240 mΩ

|VGS(TH)| Min (V)

0.45 V

|VGS(TH)| Max (V)

1 V

QG Typ @ |VGS| = 4.5V (nC)

6 nC

CISS Typ (pF)

440 pF

CISS Condition @|VDS| (V)

10 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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