Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-WLB1515-9
P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET has been designed to minimize the onstate resistance (RD1D2(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
CISS Condition @|VDS| (V) |
20 |
|---|---|
CISS Typ (pF) |
487 |
ESD Diodes (Y|N) |
No |
Polarity |
P |
QG Typ @ |VGS| = 10V (nC) |
N/A |
QG Typ @ |VGS| = 4.5V (nC) |
6.3 |
AEC Qualified |
No |
RDS(ON)Max@ VGS(1.8V) (mΩ) |
150 |
RDS(ON)Max@ VGS(10V) (mΩ) |
N/A |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
90 |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
62 |
|VDS| (V) |
20 |
|VGS| (±V) |
8 |
|VGS(TH)| Max (V) |
1 |
|VGS(TH)| Min (V) |
0.4 |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2556 | 2021-11-22 | 2022-05-22 | Device End of Life (EOL) |
| PCN-2507 | 2021-02-03 | 2021-05-03 | Qualification of Additional Wafer Backside Material Supplier |
