Diodes Incorporated
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DMP2070UCB6 (Not Recommended for new design)

NRND = Not Recommended for New Design


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This new generation 20V P-Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.


  • Battery Management
  • Load Switch
  • Battery Protection
  • Product Specifications

    Product Parameters

    Compliance (Only Automotive supports PPAP) Standard
    CISS Condition @|VDS| (V) 10
    CISS Typ (pF) 210
    Compliance (Only Automotive(Q) supports PPAP) Standard
    ESD Diodes (Y|N) No
    |IDS| @TA = +25°C (A) 3.5
    PD @TA = +25°C (W) 1.47
    Polarity P
    QG Typ @ |VGS| = 4.5V (nC) 2.9
    AEC Qualified Yes
    RDS(ON)Max@ VGS(1.8V)(mΩ) 110
    RDS(ON)Max@ VGS(2.5V)(mΩ) 90
    RDS(ON)Max@ VGS(4.5V)(mΩ) 70
    |VDS| (V) 20
    |VGS| (±V) 8
    |VGS(TH)| Max (V) 1
    |VGS(TH)| Min (V) 0.4

    Related Content


    Technical Documents

    Recommended Soldering Techniques


    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2556 2021-11-22 2022-05-22 Device End of Life (EOL)
    PCN-2507 2021-02-03 2021-05-03 Qualification of Additional Wafer Backside Material Supplier