Diodes Incorporated
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DMP2069UFY4Q

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Up To 3kV
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • Qualified to AEC-Q101 Standards for High Reliability
    PPAP Capable 

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 2.5 A
PD @TA = +25°C (W) 0.53 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 54 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 69 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 90 mΩ
|VGS(TH)| Max (V) 1 V
CISS Typ (pF) 214 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC