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DMP2065U

20V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen- and Antimony-Free. “Green” Device 
  • For automotive applications requiring specific change
    control (i.e. parts qualified to AEC-Q100/101/200, PPAP
    capable, and manufactured in IATF 16949 certified
    facilities), please contact us or your local Diodes
    representative. https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Qualified to AEC-Q10x No
Compliance (Only Automotive supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) No
VDS (V) 20 V
VGS (±V) 12 ±V
IDS @TA = +25°C (A) 4 A
PD @TA = +25°C (W) 1.5 W
RDS(ON)Max @ VGS(4.5V)(mΩ) 60 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 90 mΩ
RDS(ON)Max @ VGS(1.8V)(mΩ) 113 mΩ
VGS (th) Max (V) 0.9 V
QG Typ @ VGS = 4.5V (nC) 10.2 nC

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMP2065UFDB-7

DMP2065UFDB-7

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
RS Components 2980 9/21/2021 England Buy Now
Request Sample

PCNs

Product Change Notices

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products