P-CHANNEL ENHANCEMENT MODE MOSFET
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), making it ideal for high efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 4.2 A |
| PD @TA = +25°C (W) | 1.3 W |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 45 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 62 mΩ |
| |VGS(TH)| Min (V) | 0.4 V |
| |VGS(TH)| Max (V) | 1.2 V |
| QG Typ @ |VGS| = 4.5V (nC) | 1.46 nC |
| CISS Typ (pF) | 327 pF |
| CISS Condition @|VDS| (V) | 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2508 | 2021-03-17 | 2021-03-18 | Change Date Code Marking Information from “YM” (Year/Month) to “YW” (Year/Week) |
