Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TSOT26
P-Channel Enhancement Mode MOSFET
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This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
• Low Input Capacitance
• Low On-Resistance
• Fast Switching Speed
• ESD protected Up To 3KV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
• DC-DC Converters
• Motor Control
• Power management functions
• Analog Switch
Compliance (Only Automotive Supports PPAP) |
Automotive |
|---|---|
AEC Qualified |
Yes |
Polarity |
P |
ESD Diodes (Y|N) |
Yes |
|VDS| (V) |
20 V |
|VGS| (±V) |
12 ±V |
|IDS| @TA = +25°C (A) |
6 A |
PD @TA = +25°C (W) |
2 W |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
35 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
45 mΩ |
RDS(ON)Max@ VGS(1.8V) (mΩ) |
62 mΩ |
|VGS(TH)| Min (V) |
0.4 V |
|VGS(TH)| Max (V) |
1.5 V |
QG Typ @ |VGS| = 4.5V (nC) |
15.4 nC |
CISS Typ (pF) |
1610 pF |
CISS Condition @|VDS| (V) |
10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2457 | 2020-05-27 | 2020-08-27 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, and Change to Palladium Coated Copper Bond Wire, and New Mold Compound on Select Automotive Products |
