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DMP2033UCB9 (Obsolete)

P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

LD-MOS Technology with the Lowest Figure of Merit:
- R_DS(ON) = 28mΩ to Minimize On-State Losses
- Q_g = 5.4nC for Ultra-Fast Switching
V_GS(TH) = -0.6V Typ. for a Low Turn-On Potential
CSP with Footprint 1.5mm × 1.5mm
Height = 0.62mm for Low Profile
ESD = 3kV HBM Protection of Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotive-products/.
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.

https://www.diodes.com/quality/product-definitions/

Application(s)

Battery managements
Load switches
Battery protections

Product Specifications

Product Parameters

Compliance (Only Automotive(Q) supports PPAP)	Standard

Technical Documents

SPICE Model

DMP2033UCB9.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2556	2021-11-22	2022-05-22	Device End of Life (EOL)