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DMP2016UFDF

P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
Low Gate Threshold Voltage
Low On-Resistance
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us or your local Diodes representative.
https://www.diodes.com/quality/product-definitions/

Application(s)

Battery Management Application
Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	P
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	9.5 A
P_D @T_A = +25°C (W)	1.8 W
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	15 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	19 mΩ
\|V_GS(TH)\| Max (V)	1.1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	17 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	30(@8V) nC

Technical Documents

SPICE Model

DMP2016UFDF.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products