Diodes Incorporated
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DMP2010UFV

20V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low RDS(ON) – Ensures On State Losses Are Minimized
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products
  • Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product

Application(s)

  • Load Switch
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) No
|VDS| (V) 20 V
|VGS| (±V) 10 ±V
|IDS| @TC = +25°C (A) 50 A
PD @TA = +25°C (W) 2 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 9.5 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 12.5 mΩ
|VGS(TH)| Min (V) 0.4 V
|VGS(TH)| Max (V) 1.2 V
QG Typ @ |VGS| = 4.5V (nC) 50 nC
QG Typ @ |VGS| = 10V (nC) 103 nC
CISS Typ (pF) 3350 pF
CISS Condition @|VDS| (V) 10 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2601 2022-10-28 2023-01-28 Additional Wafer Source for Select Discrete Products
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.

FAQs

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