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PowerDI3333-8.png20V P-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 10 ±V |
| |IDS| @TA = +25°C (A) | 12.7 A |
| PD @TA = +25°C (W) | 2.3 W |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 9.5 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 12.5 mΩ |
| |VGS(TH)| Min (V) | 0.4 V |
| |VGS(TH)| Max (V) | 1.2 V |
| QG Typ @ |VGS| = 4.5V (nC) | 50 nC |
| QG Typ @ |VGS| = 10V (nC) | 103 nC |
| CISS Typ (pF) | 3350 pF |
| CISS Condition @|VDS| (V) | 10 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2601 | 2022-10-28 | 2023-01-28 | Additional Wafer Source for Select Discrete Products |
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
| PCN-2456 | 2020-05-29 | 2020-08-29 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site Using Copper or Palladium Coated Copper Bond Wire with Standardization of Assembly Bill of Materials, Or as an Additional Wafer Plating, Back Grinding and Back Metal Process Source, and Qualification of Additional Wafer Source for Select Discrete Products. |
