Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)
P-Channel Enhancement Mode MOSFET
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This new generation 100V Pchannel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to DC/DC power management and Motherboard / Servers application.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
Yes |
Polarity |
P |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
100 V |
|VGS| (±V) |
20 ±V |
|IDS| @TC = +25°C (A) |
9 A |
PD @TC = +25°C (W) |
42 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
240 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
300 mΩ |
|VGS(TH)| Max (V) |
3 V |
QG Typ @ |VGS| = 4.5V (nC) |
8.4 nC |
QG Typ @ |VGS| = 10V (nC) |
17.5 nC |
CISS Typ (pF) |
1239 pF |
CISS Condition @|VDS| (V) |
25 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2761 | 2025-10-15 | 2025-10-15 | Add Ejector Pin Mark on TO-252 Packaged Products Manufactured at Diodes Internal Assembly and Test Site (SAT) |
