Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23
P-Channel Enhancement Mode MOSFET
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This new generation 12V P Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable, battery packing and other power management functions.
| Compliance (Only Automotive Supports PPAP) | Standard |
|---|---|
| AEC Qualified | Yes |
| Polarity | P |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 12 V |
| |VGS| (±V) | 8 ±V |
| |IDS| @TA = +25°C (A) | 5.2 A |
| PD @TA = +25°C (W) | 1.3 W |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 31 mΩ |
| RDS(ON)Max@ VGS(2.5V) (mΩ) | 45 mΩ |
| RDS(ON)Max@ VGS(1.8V) (mΩ) | 75 mΩ |
| |VGS(TH)| Min (V) | 0.3 V |
| |VGS(TH)| Max (V) | 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 15.8 nC |
| CISS Typ (pF) | 1357 pF |
| CISS Condition @|VDS| (V) | 10 V |
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