P-Channel Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is qualified to AEC-Q101, supported by a PPAP.
Compliance (Only Automotive Supports PPAP) |
Automotive |
---|---|
AEC Qualified |
Yes |
Polarity |
P |
ESD Diodes (Y|N) |
Yes |
|VDS| (V) |
12 V |
|VGS| (±V) |
6 ±V |
|IDS| @TA = +25°C (A) |
13 A |
|IDS| @TC = +25°C (A) |
19 A |
PD @TA = +25°C (W) |
1.05 W |
PD @TC = +25°C (W) |
2.16 W |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
11.7 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
18.6 mΩ |
|VGS(TH)| Min (V) |
0.6 V |
|VGS(TH)| Max (V) |
1.2 V |
QG Typ @ |VGS| = 4.5V (nC) |
7.1 nC |
CISS Typ (pF) |
913 pF |
CISS Condition @|VDS| (V) |
6 V |