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DMP1011LFV

P-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low RDS(ON) – Ensures On-State Losses Are Minimized
  • Small Form Factor Thermally Efficient Package Enables Higher Density End Products
  • Occupies Just 33% Of The Board Area Occupied By SO-8 Enabling Smaller End Product
  • ESD Protected Up To 3KV
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Polarity

P

ESD Diodes (Y|N)

Yes

|VDS| (V)

12 V

|VGS| (±V)

6 ±V

|IDS| @TA = +25°C (A)

13 A

|IDS| @TC = +25°C (A)

19 A

PD @TA = +25°C (W)

1.05 W

PD @TC = +25°C (W)

2.16 W

RDS(ON)Max@ VGS(4.5V)  (mΩ)

11.7 mΩ

RDS(ON)Max@ VGS(2.5V)  (mΩ)

18.6 mΩ

|VGS(TH)| Min (V)

0.6 V

|VGS(TH)| Max (V)

1.2 V

QG Typ @ |VGS| = 4.5V (nC)

7.1 nC

CISS Typ (pF)

913 pF

CISS Condition @|VDS| (V)

6 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products