DMNH6069SFVWQ

60V 175°C N-Channel Enhancement Mode MOSFET PowerDI3333-8

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, and supported by a PPAP.

Rated to +175°C—Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switch (UIS) Test in Production
Low RDS(ON)—Ensures Minimal On-State Losses
Small Form Factor Thermally Efficient Package Enables Higher Density End Products
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
Wettable Flank for Improved Optical Inspections
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
The DMNH6069SFVWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Compliance (Only Automotive Supports PPAP)	Automotive
AEC Qualified	Yes
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	5 A
\|I_DS\| @T_C = +25°C (A)	18 A
P_D @T_A = +25°C (W)	3 W
P_D @T_C = +25°C (W)	38 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	50 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	63 mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	6.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	14 nC
C_ISS Typ (pF)	740 pF
C_ISS Condition @\|V_DS\| (V)	30 V

SPICE Model

DMNH6069SFVWQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

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