Diodes Incorporated
TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

TO252-DPAK.png
Back to MOSFET Master Table

DMNH6042SK3

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Low On-Resistance
  • Low Input Capacitance

Application(s)

  • Power Management Functions
  • DC-DC Converters
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 25 A
PD @TA = +25°C (W) 3.5 W
RDS(ON)Max@ VGS(10V)(mΩ) 50 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 65 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 4.2 nC
QG Typ @ |VGS| = 10V (nC) 8.8 nC
CISS Typ (pF) 492 pF
CISS Condition @|VDS| (V) 25 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

FAQs

Related Application FAQs