Diodes Incorporated
TO252 DPAK

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DMNH6042SK3

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Low On-Resistance
  • Low Input Capacitance

Application(s)

  • Power Management Functions
  • DC-DC Converters
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 25
PD @TA = +25°C (W) 3.5
RDS(ON)Max@ VGS(10V)(mΩ) 50 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 65 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 4.2 nC
QG Typ @ |VGS| = 10V (nC) 8.8 nC
CISS Typ (pF) 492 pF
CISS Condition @|VDS| (V) 25 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf