Diodes Incorporated
Back to MOSFET Master Table

DMNH6035SPDWQ

60V 175°C Dual N-Channel Enhancement Mode MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Low RDS(ON) – Minimizes On State Losses
  • Low Input Capacitance
  • Wettable Flank for Improved Optical Inspections

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 33 A
PD @TA = +25°C (W) 2.4 W
PD @TC = +25°C (W) 68 W
RDS(ON)Max@ VGS(10V)(mΩ) 35 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 44 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 10V (nC) 16 nC
CISS Typ (pF) 879 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC