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DMNH6035SPDWQ

60V 175°C Dual N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Low RDS(ON) – Minimizes On State Losses
  • Low Input Capacitance
  • Wettable Flank for Improved Optical Inspections

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Automotive

AEC Qualified

Yes

Polarity

N+N

ESD Diodes (Y|N)

No

|VDS| (V)

60 V

|VGS| (±V)

20 ±V

|IDS| @TC = +25°C (A)

33 A

PD @TA = +25°C (W)

2.4 W

PD @TC = +25°C (W)

68 W

RDS(ON)Max@ VGS(10V)  (mΩ)

35 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

44 mΩ

|VGS(TH)| Max (V)

3 V

QG Typ @ |VGS| = 10V (nC)

16 nC

CISS Typ (pF)

879 pF

CISS Condition @|VDS| (V)

25 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products