Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8

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DMNH6022SSDQ

60V +175°C Dual N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low R_DS(ON) – Minimizes Power Losses
Low Q_G – Minimiszs Switching Losses

Compliance (Only Automotive Supports PPAP)	Automotive
AEC Qualified	Yes
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	7.1 A
\|I_DS\| @T_C = +25°C (A)	22.6 A
P_D @T_A = +25°C (W)	2.1 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	27 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	14 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	32 nC
C_ISS Typ (pF)	2127 pF
C_ISS Condition @\|V_DS\| (V)	25 V

SPICE Model

DMNH6022SSDQ.spice.txt

Recommended Soldering Techniques

TN1.pdf