Diodes Incorporated
PowerDI5060 8

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DMNH6021SPSW

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature
    Environments
  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On State Losses
  • Low Input Capacitance
  • Fast Switching Speed
  • Wettable Flank for Improved Optical Inspection
  • Lead-Free Finish; RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change control
    (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please refer
    to the related automotive grade (Q-suffix) part. A listing can
    be found at
    https://www.diodes.com/products/automotive/
  • This part is qualified to JEDEC standards (as references in
    AEC-Q) for High Reliability.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 44 A
PD @TA = +25°C (W) 3 W
PD @TC = +25°C (W) 44 W
RDS(ON)Max@ VGS(10V)(mΩ) 23 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 28 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 9.7 nC
QG Typ @ |VGS| = 10V (nC) 20.1 nC
CISS Typ (pF) 1132 pF
CISS Condition @|VDS| (V) 30 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf