Diodes Incorporated
TO252 DPAK

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DMNH6021SK3Q

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Low On-Resistance
  • Fast Switching Speed

Application(s)

  • Power Management
  • Driving Solenoids
  • Motor Control

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 50
PD @TA = +25°C (W) 3.7
RDS(ON)Max@ VGS(10V)(mΩ) 23 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 28 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 12.1 nC
QG Typ @ |VGS| = 10V (nC) 20.1 nC
CISS Typ (pF) 1143 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf