40V +175°C N-Channel Enhancement Mode MOSFET
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This new generation enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Compliance (Only Automotive Supports PPAP) | Standard |
---|---|
AEC Qualified | No |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 40 V |
|VGS| (±V) | 20 ±V |
|IDS| @TC = +25°C (A) | 220 A |
PD @TC = +25°C (W) | 240 W |
RDS(ON)Max@ VGS(10V) (mΩ) | 6 mΩ |
|VGS(TH)| Max (V) | 3 V |
QG Typ @ |VGS| = 4.5V (nC) | 31.6 nC |
QG Typ @ |VGS| = 10V (nC) | 64.7 nC |
CISS Typ (pF) | 4043 pF |
CISS Condition @|VDS| (V) | 20 V |
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