Diodes Incorporated — Analog and discrete power solutions
PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. PowerDI5060-8

Back to DMNH4006SPS

DMNH4006SPS

40V N-Channel 175?C MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature
    Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable
    and Robust End Application
  • Low RDS(ON) – Minimizes Power Losses
  • Low QG – Minimizes Switching Losses
  • <1.1mm Package Profile – Ideal for Thin Applications
  • Lead-Free Finish; RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • An Automotive-Compliant Part is Available Under Separate
    Datasheet (DMNH4006SPSQ)

Application(s)

  • Engine Management Systems
  • Body Control Electronics
  • DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

No

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

40 V

|VGS| (±V)

20 ±V

|IDS| @TC = +25°C (A)

110 A

PD @TA = +25°C (W)

3 W

RDS(ON)Max@ VGS(10V)  (mΩ)

7 mΩ

|VGS(TH)| Max (V)

4 V

QG Typ @ |VGS| = 10V (nC)

50.9 nC

CISS Typ (pF)

2280 pF

CISS Condition @|VDS| (V)

25 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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