Diodes Incorporated
PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

PowerDI5060-8.png
Back to MOSFET Master Table

DMNH4005SPS

40V N-CHANNEL 175°C MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
  • Low RDS(ON) – Minimizes Power Losses
  • Low QG – Minimizes Switching Losses
  • <1.1mm Package Profile – Ideal for Thin Applications

Application(s)

  • Motor Control
  • Power Supplies
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 120 A
PD @TA = +25°C (W) 2.8 W
RDS(ON)Max@ VGS(10V)(mΩ) 4 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 23 nC
QG Typ @ |VGS| = 10V (nC) 48 nC
CISS Typ (pF) 2847 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2439 2019-12-05 2020-03-05 Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold
Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products

FAQs

Related Application FAQs