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DMN67D8LW

60V N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • Motor Control
  • Power Management Functions
  • Backlighting

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Standard
AEC Qualified Yes
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 30 ±V
|IDS| @TA = +25°C (A) 0.24 A
PD @TA = +25°C (W) 0.47 W
RDS(ON)Max@ VGS(10V)  (mΩ) 5000 mΩ
RDS(ON)Max@ VGS(4.5V)  (mΩ) 7500 (@5V) mΩ
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 0.361 nC
QG Typ @ |VGS| = 10V (nC) 0.821 nC
CISS Typ (pF) 22 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2744 2025-06-04 2025-09-03 Additional Wafer Source for Select Discrete Products
PCN-2484 2020-11-04 2021-02-04 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Standardization of Assembly Bill of Materials At The Existing CAT Site for Select Discrete Products
PCN-2458 2020-07-01 2020-10-01 Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products