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DMN65D8LT

N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance: RDS(ON)
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected up to 1kV
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change
    control (i.e. parts qualified to AEC-Q100/101/200, PPAP
    capable, and manufactured in IATF 16949 certified
    facilities), please contact us or your local Diodes
    representative.
    https://www.diodes.com/quality/productdefinitions/

Application(s)

  • Motor Controls
  • Power Management Functions

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

No

Polarity

N

ESD Diodes (Y|N)

Yes

|VDS| (V)

60 V

|VGS| (±V)

20 ±V

|IDS| @TA = +25°C (A)

0.21 A

PD @TA = +25°C (W)

0.3 W

RDS(ON)Max@ VGS(10V)  (mΩ)

5000 mΩ

|VGS(TH)| Max (V)

2 V

QG Typ @ |VGS| = 4.5V (nC)

0.4 nC

CISS Typ (pF)

24 pF

CISS Condition @|VDS| (V)

25 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2744 2025-06-04 2025-09-03 Additional Wafer Source for Select Discrete Products