Diodes Incorporated
SOT23

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SOT23.png
Back to MOSFET Master Table

DMN65D8LQ

N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package
  • ESD Protected Gate

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.31 A
PD @TA = +25°C (W) 0.54 W
RDS(ON)Max@ VGS(10V)(mΩ) 3000 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 4000 (@5V) mΩ
|VGS(TH)| Max (V) 2 V
QG Typ @ |VGS| = 4.5V (nC) 0.43 nC
QG Typ @ |VGS| = 10V (nC) 0.87 nC
CISS Typ (pF) 22 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2485 2020-12-04 2021-03-04 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products