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DMN65D8LQ

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package
  • ESD Protected Gate

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive (Q)
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 60 V
|VGS| (±V) 20 ±
|IDS| @TA = +25°C (A) 0.31
PD @ TA = +25°C (W) 0.54
RDS(ON)Max @ VGS(10V)(mΩ) 3000 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 4000 (@5V) mΩ
|VGS(th)| Max (V) 2 V
QG Typ @ |VGS| = 4.5V (nC) 0.43 nC
QG Typ@ |VGS| = 10V (nC) 0.87 nC
CISS Typ (pF) 22

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMN65D8LQ-7

DMN65D8LQ-7

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Mouser Electronics Inc. 17 9/28/2021 South America, North America, Asia, Europe, Middle East Buy Now
Request Sample

PCNs

Product Change Notices

PCN # Issue Date Implementation Date Subject
PCN-2485 2020-12-04 2021-03-04 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products