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DMN63D8LW

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 1kV

Application(s)

Motor Control
Power Management Functions
Backlighting

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.35 A
P_D @T_A = +25°C (W)	0.42 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	2800 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	4200 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	13000 mΩ
\|V_GS(TH)\| Max (V)	1.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	0.9 nC
C_ISS Typ (pF)	22 pF

Technical Documents

SPICE Model

DMN63D8LW.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2458	2020-07-01	2020-10-01	Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products
PCN-2340	2018-04-26	2018-05-26	Qualification of Alternate Wafer Sources for Select MOSFET Products